GaN RF Power Transistors 2.7GHz-3.7GHz 31dbcommunication Chip Module

• Customization: Available
• Frequency Range: 2.7-3.7GHz
• Frequency: 2.7-3.7GHz
• Model NO.: ZD133FC-F01
• Application: 2.7-3.7GHz
• Frequency (GHz): 2.7~3.7
• Power Gain (dB): 35
• Small Signal Gain (dB): 38
• Output Power (dBm): 31
• Power Added Efficiency: 43%
• Quiescent Current (Ma): 280
• Operating Voltage Vd: +10V
• Operating Voltage Vg: -2V
• Maximum Input Power: +18dBm
• Operating Temperature: -55°c~85°c
• Storage Temperature: -65°c~125°c
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

ZD133FC-F01 is a 2.7~3.7GHz, 1W power amplifier chip.The chip is powered by dual power supplies. When powered by +8V, the output power is 31dBm. Both the input and output ends are integrated with DC blocking capacitors. The device is packaged in a surface-mount lead metal ceramic tube shell, which can achieve gas-grade packaging. The bottom surface needs to be grounded in a large area, which is suitable for reflow soldering installation. The leads need to be manually soldered.
 

Product Parameters

Key Metrics
1) Frequency: 2.7~3.7GHz
2) Output power: 31dB
3) Power added efficiency: 43%
4) Power gain: 35dBm
5) Small signal gain: 38dB
6) Bias: Vd:8V/280mA, Vg:-0.68V
7) Dimensions: 18.03mm×14.7mm×2.5mm

Electrical performance (T_A=25ºC, Vd=+8V, Vg=-0.68V, Pin=-4dBm)

Parameters		Min value		Typ. value		Max value
Frequency (GHz)		2.7~3.7
Power gain (dB)		-		35		-
Small signal gain (dB)		-		38		-
Output power (dBm)		-		31		-
Power added efficiency		-		43%		-
Quiescent current (mA)		-		280		-

Absolute Maximum Ratings

Operating voltage Vd		+10V
Operating voltage Vg		-2V
Maximum input power		+18dBm
Operating temperature		-55°C~85°C
Storage temperature		-65°C~125°C

Notes
1. The transistor should be stored in a dry, nitrogen environment and used in a clean environment.
2. The transistor is sensitive to static electricity. Please prevent static electricity during storage and use.
3. The transistor is a high-power product. Please ensure good grounding when using it.
4. Before powering on, make sure that the grounding is good and the power supply has no impact.
5. When powering on, confirm the power-on sequence, first add the gate voltage and then the drain voltage; when turning off the power, first turn off the drain voltage and then the gate voltage.
6. The transistor input and output have DC blocking capacitors.
7. The transistor can adapt to various conventional welding processes.

Recommended Assembly Drawing

Overall and port dimensions (mm)