Customization: | Available |
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Usage: | Mobile phone, Power Amplifier Module |
Type: | Wireless |
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Working frequency | 2200-2600MHz |
Saturated power output | 44dBm |
Gain | 44dB |
In-band flatness | <2dB |
Working current | ≤3A |
Input and output VSWR | ≤1.5 |
Out-of-band spurs |
9kHz~1GHz:≤-36dBm/30kHz
1GHz~12.75GHz:≤-30dBm/30KHz
|
Maximum lossless input | +10dBm |
Operating Voltage | DC+28V |
Power supply interface | Feed-through capacitor |
RF port | SMA-KFD |
Monitoring interface | Feed-through capacitor |
Amplifier size | 125*65*20 mm |
Operating temperature | -10~+55ºC |
Relative humidity | 5%~95%,No condensation |
Storage temperature | -25~+65ºC |
Current report | The chips will read the current value by voltage 0-5V. |
Temperature report |
The chip reads temperature value by voltage
reference of "VO = 10 mV / °C T °C500 mV
with 25ºC as the basic reference point ",
the voltage increases 10 mV astemperature 1ºC more
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