GaN RF Power Transistors 8.5-9.7GHz Communication Chip Module

• Customization: Available
• Frequency Range: 8.5-9.7GHz
• Frequency: 8.5-9.7GHz
• Application: 8.5-9.7GHz
• Drain-Source Breakdown Voltage: 120V
• Gate-Source Voltage: -10~+2V
• Drain-Source Voltage: 0~+40V
• Max Forward Gate Current: 50.8mA
• Storage Temperature: -65~+150℃
• Channel Temperature: 225℃
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

GaN RF power transistor is a high-power internally matched power transistor, based on GaN devices made with domestically produced materials and processes.It has an available operating frequency range of 8.5~9.7 GHz and can provide optimal power and gain performance in a 50Ω system at saturated power in pulse signal mode.
 

Product Features

1)Covering operating frequency band: 8.5~9.7 GHz

2)50 Ω impedance matching, easy to cascade

3)Typical operating voltage: 28 V

4)100% RF test

5)Excellent thermal stability

6)RoHS compliant

Typical Performance¹

Operating frequency (MHz)		Output power^2 (dBm)		Power added efficiency ^2 (%)		Power gain ^2 (dB)
8500		49.3		27		9.3
9100		50.7		40		10.7
9700		49.6		36		9.6

¹ Test conditions: VDS = 28 V, IDQ = 1000 mA, pulse width 100 μs, duty cycle 10%, input power Pin = 40 dBm.
² Test data based on typical application circuit, for reference.
 

Operating frequency (MHz)		Output power^3 (dBm)		Power added efficiency ^3 (%)		Power gain ^3 (dB)
8500		51.4		34		8.4
9100		51.7		41		8.7
9700		50.8		38		7.8

¹ Test conditions: VDS = 28 V, IDQ = 1000 mA, pulse width 100 μs, duty cycle 10%, input power Pin = 43 dBm.
³ Test data based on typical application circuit, for reference.

Limit Parameters

Parameters		Symbol		Value		Unit
Drain-source breakdown voltage		VDSS		120		V
Gate-source voltage		VGS		-10~+2		V
Drain-source voltage		VDS		0~+40		V
Max forward gate current		IGMAX		50.8		mA
Storage temperature		TSTG		-65~+150		ºC
Channel temperature		TCH		225		ºC

Thermal Properties

Parameters		Symbol		Value		Unit
Thermal resistance  (case temperature 70°C, heat dissipation 85 W)		Rthjc		TBD		ºC/W

Electrical Properties Table (TA = 25ºC)

Parameters		Symbol		Min value		Typ.l value		Max value		Unit
Drain-source leakage current (VGS = -10 V, VDS = 120 V)		IDSS		-		-		50.8		mA
Drain-source breakdown voltage (VGS = -10 V, ID = 50.8 mA)		V(BR)DSS		120		-		-		V
Gate threshold voltage (VDS = 28 V, ID = 50.8 mA)		VGS(TH)		-4.0		-2.8		-1.0		V
Gate quiescent bias voltage (VDS = 28 V, ID = 1000 mA)		VGS(Q)		-		-2.7		-		V

RF Performance (9700 MHz typical performance ¹)

Parameters		Symbol		Min. value		Typ. value		Max. value		Unit
Peak output power		Psat		-		TBD		-		dBm
Drain efficiency		ηD		-		TBD		-		%
Power gain		GP		-		TBD		-		dB

¹ Based on DE2G8597-150TFA mass production test fixture, test conditions: VDS = 28 V, IDQ = 1000 mA, pulse width 100 μs, duty cycle 10%.

Load Adaptability

Parameters		Results
VSWR 5:1 Operating conditions: VDS = 20 V 150 W pulse power output, pulse width 100 μs, duty cycle 10%.		TBD

Package Size

NO.		Inches						Millimeters
		Min. value		Type.value		Max.value		Min. value		Type.value		Max.value
A		0.17		0.19		0.19		4.42		4.7		4.98
A1		0.05		0.06		0.06		1.3		1.4		1.5
A2		0.08		0.09		0.09		2.15		2.4		2.65
D		0.94		0.94		0.94		23.85		24		24.15
D1		0.8		0.8		0.8		20.25		20.4		20.55
D2		0.63		0.63		0.63		15.95		16.1		16.25
D3		0.62		0.63		0.63		15.87		15.9		15.93
D4		0.02		0.02		0.02		0.55		0.6		0.65
E		0.68		0.69		0.69		17.25		17.4		17.55
E1		0.61		0.62		0.62		15.55		15.7		15.85
E2		0.61		0.61		0.61		15.47		15.5		15.53
E3		0.13		0.14		0.14		3.2		3.5		3.8
E4		0.31		0.31		0.31		7.9		8		8.1
E5		0.1		0.1		0.1		2.5		2.6		2.7
F		0		0		0		0.05		0.1		0.15
R1		0.03		0.04		0.04		0.85		1		1.15
R2		0.04		0.05		0.06		1.10		1.25		1.40

Moisture Sensitivity Level

Test Method		Level
Moisture Sensitivity Level (per J-STD-020)		TBD

Abbreviation

Abbreviation		Description
GaN		Gallium Nitride
VSWR		Voltage Standing Wave Ratio
TBD		To Be Determined