GaN RF Power Transistor 350W Communication Chip Module

• Customization: Available
• Frequency Range: 870MHz, 930MHz, 990MHz
• Frequency: 870MHz, 930MHz, 990MHz
• Model NO.: ZD-350WGaN
• Application: 870MHz, 930MHz, 990MHz
• Drain-Source Voltage: 150V
• Gate-Source Voltage: -10~+2V
• Operatingvoltage: 0~+55V
• Max Forward Gate Current: 56.1mA
• Storage Temperature: -65~+150ºC
• Operatingjunctiontemperature: 225ºC
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

ZD-350WGaN is a 350 W RF GaN HEMT Transistor with first generation RF GaN technology fromNX,whichisidealforgeneralpurposeapplicationsatfrequenciesfromDCto1.4GHz.

Freq (MHz)	Psat (dBm)	ηD^2(%)	GP^2(dB)
870	56.2	68.1	18.6
930	55.7	69.5	18.9
990	55.8	67.0	18.2

¹ Typical performance in NX Demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQ = 250 mA; Input signal Pulsed CW, Pulse width = 350 μs, Duty cycle = 16 %.
² Measured at P_out = 350 W.

Product Features

1) High efficiency, high gain

2) Excellent ruggedness

3) Excellent reliability
 

Applications

1) Broadbandgeneralpurposeamplifier

2) Testinstrumentation

3) Generalpurposeapplication

Lead-free and RoHS Compliant

 

Pinninginformation

 

Product Parameters

Ordering Information

Part number	Marking	Package Type	Packaging Information
ZD-350WGaN	ZD-350WGaN	780P2GC	Tray: Suffix = 20 units
			Tape and Reel: Suffix = 100 units;44 mm Tape width;13- inch Reel

 

Maximum ratings

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	VDSS	150	V
Gate-Source Voltage	VGS	-10 ~ +2	V
Operating Voltage	VDS	0 ~ +55	V
Maximum Forward Gate Current	IGMAX	56.1	mA
Storage Temperature Range	TSTG	- 65 ~ +150	ºC
Operating Junction Temperature	TJ	225	ºC
Absolute Maximum Channel Temperature ^1	T(MAX)	275	ºC

¹ Functional operation above 225ºC has not been characterized and is not implied. Operation at T_(MAX) (275ºC) reduces median time to failure by an order of magnitude; Operation beyond T_(MAX) could cause permanent damage.

 

Moisture Sensitivity Level

Test Methodology	Class
Moisture Sensitivity Level (per J-STD-020)	Level 1

Electrical characteristics (TA = 25ºC unless otherwise noted)
DC Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit
Side A, Carrier
Drain-Source Leakage Current (VGS = -10 V, VDS = 150 V)	IDSS	-	-	28.0	mA
Drain-Source Breakdown Voltage (VGS = -10 V, ID = 28.0 mA)	V(BR)DSS	150	-	-	V
Gate Threshold Voltage (VDS = 48 V, ID = 28.0 mA)	VGS(th)	-3.9	-3.2	-2.5	V
Gate Quiescent Voltage (VDS = 48 V, ID = 250 mA)	VGS(Q)	-3.7	-3.0	-2.3	V
Side B, Peaking
Drain-Source Leakage Current (VGS = -10 V, VDS = 150 V)	IDSS	-	-	28.0	mA
Drain-Source Breakdown Voltage (VGS = -10 V, ID = 28.0 mA)	V(BR)DSS	150	-	-	V
Gate Threshold Voltage (VDS = 48 V, ID = 28.0 mA)	VGS(th)	-3.9	-3.2	-2.5
Gate Quiescent Voltage (VDS = 48 V, ID = 250 mA)	VGS(Q)	-3.7	-3.0	-2.3	V

 

Test Information

Typical Application Circuit

List of Components

S/N	Type	Designator	Description	Value	Vendor
1	Cap	C1, C6, C7, C10, C11	ATC600F391JT250XT	39 pF	ATC
2	Cap	C2, C3, C4, C5	GRM31CZ72A225KE	2.2 uF	Murata
4	Cap	C8, C9, C24	ATC600F2R0JT250XT	2.0 pF	ATC
5	Cap	C12, C13, C14, C15	ATC600F3R3JT250XT	3.3 pF	ATC
6	Cap	C16, C17, C18, C19	ATC600F0R9JT250XT	0.9 pF	ATC
7	Cap	C20, C21	GRM31CZ72A106KE	10 uF	Murata
8	Cap	C22	ATC600F2R2JT250XT	2.2 pF	ATC
9	Cap	C23	ATC600F1R5JT250XT	1.5 pF	ATC
10	Cap	C25	ATC600F0R7JT250XT	0.7 pF	ATC
11	Cap	C26	ATC600F681JT250XT	68 pF	ATC
12	Cap	C27	ATC600F1R3JT250XT	1.3 pF	ATC
14	Res	R1, R2, R3	RC1206FR_0791RL	9.1 Ω	Yageo
15	Transistor	T1	ZD-350WGaN	-	NX
16	PCB		Rogers 4350B	20 mil	Rogers

 

Pulsed CW
 

 

Impedance Information

Typical Impedance of Carrier

Maximum Output Power
Freq (MHz)	ZS (Ω)	ZL (Ω)	GP (dB)	Psat (dBm)	Psat (W)	ηD (%)
1000	1.2 - j7.3	4.2 + j0.4	23.7	54.1	257	70.6
1400	5.3 + j19.6	2.7 + j0.5	22.6	53.6	229	68.7
Maximum Drain Efficiency
Freq (MHz)	ZS (Ω)	ZL (Ω)	GP (dB)	Psat (dBm)	Psat (W)	ηD (%)
1000	1.2 - j7.3	5.9 + j6.0	25.2	51.2	131	83.0
1400	5.3 + j19.6	3.9 + j3.6	23.0	51.5	141	80.9

¹ VDS = 48 V, IDQ = 250 mA, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

 

Typical Impedance of Peak ¹

Maximum Output Power
Freq (MHz)	ZS (Ω)	ZL (Ω)	GP (dB)	Psat (dBm)	Psat (W)	ηD (%)
1000	1.2 - j7.3	4.2 + j0.4	23.7	54.1	257	70.6
1400	5.3 + j19.6	2.7 + j0.5	22.6	53.6	229	68.7
Maximum Drain Efficiency
Freq (MHz)	ZS (Ω)	ZL (Ω)	GP (dB)	Psat (dBm)	Psat (W)	ηD (%)
1000	1.2 - j7.3	5.9 + j6.0	25.2	51.2	131	83.0
1400	5.3 + j19.6	3.9 + j3.6	23.0	51.5	141	80.9

¹ VDS = 48 V, IDQ = 250 mA, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

Median lifetime
 

 

Package Outline

DIM	INCH		MILLIMETER
	MIN	MAX	MIN	MAX
A1	0.805	0.815	20.45	20.70
A2	0.772	0.788	19.61	20.02
A3	0.153	0.162	3.87	4.13
A4	0.385	0.395	9.77	10.03
B1	0.380	0.390	9.65	9.91
B2	0.365	0.375	9.27	9.53
B3	0.108	0.128	2.75	3.25
C1	0.130	0.170	3.30	4.32
C2	0.035	0.045	0.89	1.14
C3	0.057	0.067	1.45	1.70
C4	0.003	0.006	0.08	0.15
D1	0.040 45° REF		1.02 45° REF

 

Abbreviations

Acronym	Description
CW	Continuous Waveform
ESD	Electro-Static Discharge
GaN	Gallium Nitride
HEMT	High Electron Mobility Transistor
MTTF	Median Time To Failure
VSWR	Voltage Standing Wave Ratio