GaN RF Power Transistors 8-12GHz Communication Chip Module

• Customization: Available
• Frequency Range: 8-12GHz
• Frequency: 8-12GHz
• Model NO.: ZD135F6C-F01
• Application: 8-12GHz
• Frequency (GHz): 8-12
• Power Gain (Db): 16
• Power Gain Flatness (Db): ±0.5
• Input/Output Standing Wave: 1.6/1.6
• Saturated Output Power (dBm): 31
• Power Added Efficiency: 45%
• Quiescent Current (Ma): 480
• Operating Voltage VDE Vd: +7V
• Operating Voltage Vg: -2V
• Maximum Input Power: +20dBm
• Operating Temperature: -55°C~85°C
• Storage Temperature: -65°C~125°C
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

ZD135F6C-F01 is an X-band power amplifier chip,powered by dual power supplies, with a positive voltage of +5V and a quiescent current of 480mA. Both the input and output ends are integrated with DC blocking capacitors. The transistor is packaged in a surface mount lead metal ceramic tube shell, which can achieve gas-grade packaging. The bottom surface needs to be grounded in a large area, suitable for reflow soldering installationprocess, and the leads need to be manually soldered.
 

Product Parameters

Key Metrics
1) Covering operating frequency band:8~12 GHz
2) Power gain: 16dB
3) Saturated output power: 31dBm
4) 1dB compression point output power: 30dBm
5) Power added efficiency: 45%
6) Voltage/quiescent current: Vd: +5V/480mA, Vg: -0.6V
7) Dimensions: 18.03mm×14.7mm×2.5mm


Electrical performance (T_A=25ºC, Vd=+8V, Vg=-0.68V, Pin=-4dBm)

Parameters	Min value	Typ. value	Max value
Frequency (GHz)	8~12
Power gain (dB)	-	16	-
Power gain flatness (dB)	-	±0.5	-
Input/output standing wave	-	1.6/1.6	-
Saturated output power (dBm)	-	31	-
Power added efficiency		45%
Quiescent current (mA)	-	480	-

Absolute Maximum Ratings

Operating voltage Vd	+7V
Operating voltage Vg	-2V
Maximum input power	+20dBm
Operating temperature	-55°C~85°C
Storage temperature	-65°C~125°C

Notes
1. The transistor should be stored in a dry, nitrogen environment and used in a clean environment.
2. The transistor is sensitive to static electricity. Please prevent static electricity during storage and use.
3. The transistor is a high-power product. Please ensure good grounding when using it.
4. Before powering on, make sure that the grounding is good and the power supply has no impact.
5. When powering on, confirm the power-on sequence, first add the gate voltage and then the drain voltage; when turning off the power, first turn off the drain voltage and then the gate voltage.
6. The transistor input and output have DC blocking capacitors.
7. The transistor can adapt to various conventional welding processes.

Recommended Assembly Drawing

Overall and port dimensions (mm)