GaN RF Power Transistors 20MHz-1000MHz Communication Chip Module

• Customization: Available
• Frequency Range: 20-1000MHz
• Frequency: 20-1000MHz
• Model NO.: ZD-TA9410E-EVB-B
• Application: 20-1000MHz
• Drain-Source Breakdown Voltage: 120V
• Gate-Source Voltage: -10~+2V
• Drain-Source Voltage: 0~+40V
• Max Forward Gate Current: 50.8mA
• Storage Temperature: -65~+150ºC
• Channel Temperature: 225ºC
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

The ZD-TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and efficiency for the desired band.

The ZD-TA9410E is packaged in a compact, low-cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package.

ZD-TA9410E-EVB-B is an evaluation board specially tuned for frequency range of 20MHz~1000MHz applications. Its high output power, power added efficiency performance makes it suitable for application of private mobile radio handsets, public safety radios, Cellular infrastructure, wireless radios etc.

 

ZD-TA9410E-EVB-B Board Details

Figure1 ZD-TA9410E-EVB-B 20MHz ~ 1000MHz Schematic and EVB Layout

TA9410E-EVB-B Bill of Material

Component ID	Value	ManuTaCturer	ReCOm  endaea PartINumoer
C11,C12	4.7nF,100V	Murata	GCD188R72A472KA01
R31	3.6Ω,0.5W	Panasonic	ERJ-P06J3R6V
L32	3.3nH	Coil craft	0603HP-3N3XJLC
C33	8.2pF	AVX	600S8R2CT250XT
L34	6.8nH	Coil craft	0603HP-6N8XJLC
C35	4.7pF	AVX	600S4R7BT250XT
L41	6.9nH	Coil craft	0807SQ-6N9GLB
C42	2.2pF	AVX	600S2R2CT250XT
L51	1.3μH	Coil craft	4310LC-132KEC
C52	0.1μF,100V	Murata	GRM31C5C2A104JA01
C53	4.7μF,100V	Murata	GCM32DC72A475KE02
C54	100μF,63V	Nichicon	UPW1J101MPD1TD
D71	7.5V Zener	On Semiconductor	SZMMSZ5236BT1G
C72	0.1μF,10V	AVX	0603ZC104K4T2A
R73	24.9Ω,0.75W	Vishay	CRCW121024R9FKEAHP
C78	47μF,16V	Murata	GRM32ER61C476ME15L
Q1	25WGaN transistor	Tagore Technology	TA9410E
PCB	Rogers RO4350B,20 mils,1 oz copper

Table1 TA9410E-EVB-B BOM

ZD-TA9410E-EVB-B Biasing Sequence

Turn ON Device	Turn OFF Device
1.Set VG to-5V 2.Set VD to+50V 3.Adjust Vg to reach required lbQ current 4.Apply RF power	1.Turn RF power off 2.Turn off VD 3.Turn off VG

Table2 TA9410E-EVB-B Bias and Sequencing

ZD-TA9410E-EVB-B Board Measurement Summary

Frequency (MHz)	S21 Gain(dB)	S11(dB)	S22(dB)	Psat(dBm)	PAE(%)@Psat
20	21.4	-11.4	-2.6	44.9	78
200	21.4	-9.0	-2.9	45.0	75
525	21.0	-11.4	-2.7	44.6	58
800	20.3	-8.7	-4.9	45.3	56
1000	20.4	-13.7	-4.9	44.6	58

Table3 TA9410E-EVB-B Electrical Characteristics Summary

ZD-TA9410E-EVB-B Test Results

All the tests are carried out at room temperature.

S parameters

Figure2 Sparameters of ZD-TA9410E-EVB-B

 

Large Signal Test Results
Figure3 Gain Vs Pout of ZD-TA9410E-EVB-B

Figure4 IRL and Pdiss Vs Poutof ZD-TA9410E-EVB-B

Figure5 IMD3 Vs Pout of ZD-TA9410E-EVB-B
(Vdd=50V, Idq = 50mA, 1MHz tone spacing)

Figure6 IMD5 Vs Pout of ZD-TA9410E-EVB-B
(Vdd=50V, Idq = 50mA, 1MHz tone spacing)


Figure7 IMD3 Vs Pout of ZD-TA9410E-EVB-B
(Vdd=50V, Idq = 75mA, 1MHz tone spacing)

Figure8 IMD3Vs Poutof ZD-TA9410E-EVB-B
(Vdd=50V, Idq = 75mA, 1MHz tone spacing)

Temperature data: -40ºC, 25ºC, 858ºC5⁰C

Figure9 Gain and PAE vs Pout over temperature at 20MHz of ZD-TA9410E-EVB-B

 

Figure10 Gain and PAE vs Pout over temperature at 525MHz of ZD-TA9410E-EVB-B

Figure10 Gain and PAE vs Pout over temperature at 1000MHz of ZD-TA9410E-EVB-B