GaN RF Power Transistor 350W Communication Chip Module

• Customization: Available
• Frequency Range: 870MHz, 930MHz, 990MHz
• Frequency: 870MHz, 930MHz, 990MHz
• Model NO.: ZD-350WGaN
• Application: 870MHz, 930MHz, 990MHz
• Drain-Source Voltage: 150V
• Gate-Source Voltage: -10~+2V
• Operatingvoltage: 0~+55V
• Max Forward Gate Current: 56.1mA
• Storage Temperature: -65~+150ºC
• Operatingjunctiontemperature: 225ºC
• Transport Package: by Box
• Specification: To be customized
• Trademark: ZD TECH
• Origin: China
• HS Code: 8543209090
• Production Capacity: 2000pieces/Month

Product Description

Product Description

ZD-350WGaN is a 350 W RF GaN HEMT Transistor with first generation RF GaN technology fromNX,whichisidealforgeneralpurposeapplicationsatfrequenciesfromDCto1.4GHz.

Freq (MHz)	Psat (dBm)	ηD^2(%)	GP^2(dB)
870	56.2	68.1	18.6
930	55.7	69.5	18.9
990	55.8	67.0	18.2

¹ Typical performance in NX Demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQ = 250 mA; Input signal Pulsed CW, Pulse width = 350 μs, Duty cycle = 16 %.
² Measured at P_out = 350 W.

Product Features

1) High efficiency, high gain

2) Excellent ruggedness

3) Excellent reliability
 

Applications