What is the frequency range of this transistor?

The device is ideal for general purpose applications at frequencies from DC to 1.4 GHz, with specific performance data provided for 870 MHz, 930 MHz, and 990 MHz.

What is the maximum power output?

The ZD-350WGaN provides a saturated power output (Psat) of 350 W.

What are the maximum voltage ratings?

The maximum Drain-Source Voltage (VDSS) is 150 V, and the Gate-Source Voltage (VGS) ranges from -10 V to +2 V.

Is this product RoHS compliant?

Yes, the product is lead-free and RoHS compliant.

What packaging options are available?

It is available in a Tray package with 20 units per tray or a Tape and Reel package with 100 units per reel.

What are the typical applications for this module?

It is suitable for broadband general purpose amplifiers, test instrumentation, and general purpose applications.

What is the lead time for this product?

The lead time is within 15 workdays during the off-season and one month during the peak season.

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GaN RF Power Transistor 350W Communication Chip Module

Shenzhen Zd Tech Co., Ltd

5 yrs

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Product Highlights

High Efficiency and Gain: Delivers up to 83% drain efficiency and 25.2 dB gain at 1000 MHz.
Wide Frequency Range: Operates effectively from DC to 1.4 GHz with specific performance at 870, 930, and 990 MHz.
High Power Output: Provides 350 W saturated power output (Psat) with excellent ruggedness.
Advanced GaN Technology: Utilizes first-generation RF GaN HEMT technology for superior performance.
RoHS Compliant: Manufactured with lead-free materials ensuring environmental compliance.
Robust Reliability: Features excellent ruggedness and reliability for general purpose applications.
Flexible Packaging: Available in Tray (20 units) or Tape and Reel (100 units) options.

Product Attributes

Customization: Available
Frequency Range: 870MHz, 930MHz, 990MHz
Frequency: 870MHz, 930MHz, 990MHz
Model NO.: ZD-350WGaN
Application: 870MHz, 930MHz, 990MHz
Drain-Source Voltage: 150V
Gate-Source Voltage: -10~+2V
Operatingvoltage: 0~+55V
Max Forward Gate Current: 56.1mA
Storage Temperature: -65~+150℃
Operatingjunctiontemperature: 225℃
Transport Package: by Box
Specification: To be customized
Trademark: ZD TECH
Origin: China
HS Code: 8543209090
Production Capacity: 2000pieces/Month

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GaN RF Power Transistor 350W Communication Chip Module pictures & photos — GaN RF Power Transistor 350W Communication Chip Module

GaN RF Power Transistor 350W Communication Chip Module
GaN RF Power Transistor 350W Communication Chip Module
GaN RF Power Transistor 350W Communication Chip Module
GaN RF Power Transistor 350W Communication Chip Module
GaN RF Power Transistor 350W Communication Chip Module
GaN RF Power Transistor 350W Communication Chip Module

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GaN RF Power Transistor 350W Communication Chip Module
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Product Description

ZD-350WGaN is a 350 W RF GaN HEMT Transistor with first generation RF GaN technology fromNX,whichisidealforgeneralpurposeapplicationsatfrequenciesfromDCto1.4GHz.

Freq (MHz)	P_sat(dBm)	η_D²(%)	G_P²(dB)
870	56.2	68.1	18.6
930	55.7	69.5	18.9
990	55.8	67.0	18.2

¹ Typical performance in NX Demo with the device soldered onto the heatsink, test condition: V_DS = 48 V, I_DQ = 250 mA; Input signal Pulsed CW, Pulse width = 350 μs, Duty cycle = 16 %.
² Measured at P_out= 350 W.

1) High efficiency, high gain

2) Excellent ruggedness

3) Excellent reliability

1) Broadbandgeneralpurposeamplifier

2) Testinstrumentation

3) Generalpurposeapplication

Lead-free and RoHS Compliant

GaN RF Power Transistor 350W Communication Chip Module

Pinninginformation

GaN RF Power Transistor 350W Communication Chip Module

Ordering Information

Part number	Marking	Package Type	Packaging Information
ZD-350WGaN	ZD-350WGaN	780P2GC	Tray: Suffix = 20 units
			Tape and Reel: Suffix = 100 units;44 mm Tape width;13- inch Reel

Maximum ratings

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	V_DSS	150	V
Gate-Source Voltage	V_GS	-10 ~ +2	V
Operating Voltage	V_DS	0 ~ +55	V
Maximum Forward Gate Current	I_GMAX	56.1	mA
Storage Temperature Range	T_STG	- 65 ~ +150	ºC
Operating Junction Temperature	T_J	225	ºC
Absolute Maximum Channel Temperature ¹	T₍_MAX)	275	ºC

¹ Functional operation above 225ºC has not been characterized and is not implied. Operation at T₍_MAX) (275ºC) reduces median time to failure by an order of magnitude; Operation beyond T₍_MAX) could cause permanent damage.

Moisture Sensitivity Level

Test Methodology	Class
Moisture Sensitivity Level (per J-STD-020)	Level 1

Electrical characteristics (TA = 25ºC unless otherwise noted)
DC Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit
Side A, Carrier
Drain-Source Leakage Current (V_GS = -10 V, V_DS = 150 V)	I_DSS	-	-	28.0	mA
Drain-Source Breakdown Voltage (V_GS = -10 V, I_D = 28.0 mA)	V_(BR)DSS	150	-	-	V
Gate Threshold Voltage (V_DS = 48 V, I_D = 28.0 mA)	V_GS(th)	-3.9	-3.2	-2.5	V
Gate Quiescent Voltage (V_DS = 48 V, I_D = 250 mA)	V_GS(Q)	-3.7	-3.0	-2.3	V
Side B, Peaking
Drain-Source Leakage Current (V_GS = -10 V, V_DS = 150 V)	I_DSS	-	-	28.0	mA
Drain-Source Breakdown Voltage (V_GS = -10 V, I_D = 28.0 mA)	V_(BR)DSS	150	-	-	V
Gate Threshold Voltage (V_DS = 48 V, I_D = 28.0 mA)	V_GS(th)	-3.9	-3.2	-2.5
Gate Quiescent Voltage (V_DS = 48 V, ID = 250 mA)	V_GS(Q)	-3.7	-3.0	-2.3	V

Test Information

Typical Application Circuit

List of Components

S/N	Type	Designator	Description	Value	Vendor
1	Cap	C1, C6, C7, C10, C11	ATC600F391JT250XT	39 pF	ATC
2	Cap	C2, C3, C4, C5	GRM31CZ72A225KE	2.2 uF	Murata
4	Cap	C8, C9, C24	ATC600F2R0JT250XT	2.0 pF	ATC
5	Cap	C12, C13, C14, C15	ATC600F3R3JT250XT	3.3 pF	ATC
6	Cap	C16, C17, C18, C19	ATC600F0R9JT250XT	0.9 pF	ATC
7	Cap	C20, C21	GRM31CZ72A106KE	10 uF	Murata
8	Cap	C22	ATC600F2R2JT250XT	2.2 pF	ATC
9	Cap	C23	ATC600F1R5JT250XT	1.5 pF	ATC
10	Cap	C25	ATC600F0R7JT250XT	0.7 pF	ATC
11	Cap	C26	ATC600F681JT250XT	68 pF	ATC
12	Cap	C27	ATC600F1R3JT250XT	1.3 pF	ATC
14	Res	R1, R2, R3	RC1206FR_0791RL	9.1 Ω	Yageo
15	Transistor	T1	ZD-350WGaN	-	NX
16	PCB		Rogers 4350B	20 mil	Rogers

Pulsed CW

Impedance Information

Typical Impedance of Carrier

Maximum Output Power
Freq (MHz)	Z_S (Ω)	ZL (Ω)	G_P (dB)	P_sat (dBm)	P_sat (W)	η_D (%)
1000	1.2 - j7.3	4.2 + j0.4	23.7	54.1	257	70.6
1400	5.3 + j19.6	2.7 + j0.5	22.6	53.6	229	68.7
Maximum Drain Efficiency
Freq (MHz)	Z_S (Ω)	ZL (Ω)	G_P (dB)	P_sat (dBm)	P_sat (W)	η_D (%)
1000	1.2 - j7.3	5.9 + j6.0	25.2	51.2	131	83.0
1400	5.3 + j19.6	3.9 + j3.6	23.0	51.5	141	80.9

¹VDS = 48 V, IDQ = 250 mA, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

Typical Impedance of Peak¹

Maximum Output Power
Freq (MHz)	Z_S (Ω)	ZL (Ω)	G_P (dB)	P_sat (dBm)	P_sat (W)	η_D (%)
1000	1.2 - j7.3	4.2 + j0.4	23.7	54.1	257	70.6
1400	5.3 + j19.6	2.7 + j0.5	22.6	53.6	229	68.7
Maximum Drain Efficiency
Freq (MHz)	Z_S (Ω)	ZL (Ω)	G_P (dB)	P_sat (dBm)	P_sat (W)	η_D (%)
1000	1.2 - j7.3	5.9 + j6.0	25.2	51.2	131	83.0
1400	5.3 + j19.6	3.9 + j3.6	23.0	51.5	141	80.9

¹ VDS = 48 V, IDQ = 250 mA, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

GaN RF Power Transistor 350W Communication Chip Module

Median lifetime

Package Outline

DIM	INCH		MILLIMETER
DIM	MIN	MAX	MIN	MAX
A1	0.805	0.815	20.45	20.70
A2	0.772	0.788	19.61	20.02
A3	0.153	0.162	3.87	4.13
A4	0.385	0.395	9.77	10.03
B1	0.380	0.390	9.65	9.91
B2	0.365	0.375	9.27	9.53
B3	0.108	0.128	2.75	3.25
C1	0.130	0.170	3.30	4.32
C2	0.035	0.045	0.89	1.14
C3	0.057	0.067	1.45	1.70
C4	0.003	0.006	0.08	0.15
D1	0.040 45° REF		1.02 45° REF

Abbreviations

Acronym	Description
CW	Continuous Waveform
ESD	Electro-Static Discharge
GaN	Gallium Nitride
HEMT	High Electron Mobility Transistor
MTTF	Median Time To Failure
VSWR	Voltage Standing Wave Ratio

About the Supplier

This supplier has been audited by BV. Verify the report on the official BV website with ID "MIC-ASR232920". Items marked "" are certified.

Company Profile

SHENZHEN ZD TECH Co., Ltd

Shenzhen ZD Tech Co., Ltd. is a high-tech company specializing in RF, microwave, regional security, low-altitude economy, and satellite communications.

Our advanced in-house facilities feature automated production lines and precision equipment for high-reliability microwave packaging, covering high-power modules, BUCs, satcom antennas, radar components, and signal detectors.

To ensure every product meets rigorous performance standards, our comprehensive test capabilities include chip test systems, anechoic chambers, near-field/far-field measurement ranges, assembly test lines, and environmental test chambers-all integrated with our proprietary fast automated test technology, developed in-house for maximum speed and accuracy. This enables full-parameter testing, rapid parametric characterization, pattern measurement, thermal cycling, vibration, and humidity testing under automated control, from chip-level to final system validation.

With strict quality control, flexible customization, and a proven track record in satellite communications, radar systems, drone detection, and low-altitude security, ZDTECH is a trusted global partner for mission-critical RF applications.

About Our Factory & Business Background

Address: 2501, Block a, Renheng Mengchuang Plaza, Huilongpu Community, Longcheng Street, Longgang District, Shenzhen, Guangdong, China
Terms of Payment: LC, T/T, D/P, PayPal, Western Union, Small-amount payment
International Commercial Terms(Incoterms): FOB, EXW, CIF, FAS, DDP, DAP, FCA
Average Lead Time: Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays
Nearest Port: Yantian Port

Our Production Capability & Technical Expertise

Main Products: Power Amplifier Module, Satellite Communication System, Buc, Phased Array Antenna, Microwave Components, Sspa, Tr Module, Df System, Antenna, Radar

Our Industry Experience & Global Business Record

Export Year: 2022-07-04
Main Markets: North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe

FAQ

What is the frequency range of this transistor?: The device is ideal for general purpose applications at frequencies from DC to 1.4 GHz, with specific performance data provided for 870 MHz, 930 MHz, and 990 MHz.
What is the maximum power output?: The ZD-350WGaN provides a saturated power output (Psat) of 350 W.
What are the maximum voltage ratings?: The maximum Drain-Source Voltage (VDSS) is 150 V, and the Gate-Source Voltage (VGS) ranges from -10 V to +2 V.
Is this product RoHS compliant?: Yes, the product is lead-free and RoHS compliant.
What packaging options are available?: It is available in a Tray package with 20 units per tray or a Tape and Reel package with 100 units per reel.
What are the typical applications for this module?: It is suitable for broadband general purpose amplifiers, test instrumentation, and general purpose applications.
What is the lead time for this product?: The lead time is within 15 workdays during the off-season and one month during the peak season.